• DocumentCode
    1114646
  • Title

    Saturation effects in semiconductor lasers

  • Author

    Chow, Weng W. ; Dente, Gregory C. ; Depatie, David

  • Author_Institution
    Hughes Aircraft Co., Albuquerque, NM, USA
  • Volume
    23
  • Issue
    8
  • fYear
    1987
  • fDate
    8/1/1987 12:00:00 AM
  • Firstpage
    1314
  • Lastpage
    1320
  • Abstract
    This paper describes a theory for a semiconductor active medium interacting with a laser field. In a semiconductor laser, the charge carrier transitions are inhomogenously broadened, and electron-electron and electron-phonon collisions tend to dephase the laser transitions and maintain thermal equilibrium among the carriers. These properties cause semiconductor lasers to frequency tune as though they are inhomogeneously broadened and to saturate as though they are homogeneously broadened. A theory that contains these two aspects of semiconductor laser behavior is presented. From it, we are able to calculate the loaded gain, efficiency, intensity, and carrier-induced refractive index of a semiconductor active medium.
  • Keywords
    Semiconductor lasers; Charge carriers; Gas lasers; Laser mode locking; Laser modes; Laser theory; Laser transitions; Laser tuning; Refractive index; Semiconductor laser arrays; Semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1987.1073517
  • Filename
    1073517