DocumentCode
1114646
Title
Saturation effects in semiconductor lasers
Author
Chow, Weng W. ; Dente, Gregory C. ; Depatie, David
Author_Institution
Hughes Aircraft Co., Albuquerque, NM, USA
Volume
23
Issue
8
fYear
1987
fDate
8/1/1987 12:00:00 AM
Firstpage
1314
Lastpage
1320
Abstract
This paper describes a theory for a semiconductor active medium interacting with a laser field. In a semiconductor laser, the charge carrier transitions are inhomogenously broadened, and electron-electron and electron-phonon collisions tend to dephase the laser transitions and maintain thermal equilibrium among the carriers. These properties cause semiconductor lasers to frequency tune as though they are inhomogeneously broadened and to saturate as though they are homogeneously broadened. A theory that contains these two aspects of semiconductor laser behavior is presented. From it, we are able to calculate the loaded gain, efficiency, intensity, and carrier-induced refractive index of a semiconductor active medium.
Keywords
Semiconductor lasers; Charge carriers; Gas lasers; Laser mode locking; Laser modes; Laser theory; Laser transitions; Laser tuning; Refractive index; Semiconductor laser arrays; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1987.1073517
Filename
1073517
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