• DocumentCode
    1114707
  • Title

    The effect of interface states on amorphous-silicon transistors

  • Author

    Ibaraki, Nobuki ; Fukuda, Kaichi ; Takata, Hiroko

  • Author_Institution
    Toshiba Corp., Yokohama, Japan
  • Volume
    36
  • Issue
    12
  • fYear
    1989
  • fDate
    12/1/1989 12:00:00 AM
  • Firstpage
    2971
  • Lastpage
    2972
  • Abstract
    The properties of the interface where silicon nitride is deposited on top of a-Si:H have been investigated using two types of thin-film transistor (TFT) structure: a top-gate TFT with nitride gate dielectric and a bottom-gate TFT with a nitride passivation layer. TFT characteristics depend strongly on the nitride properties and the thickness of the a-Si:H, particularly at thicknesses less than 3000 Å. Results are interpreted in terms of the effect of interface states
  • Keywords
    amorphous semiconductors; elemental semiconductors; hydrogen; interface electron states; passivation; silicon; silicon compounds; thin film transistors; Si:H-SiNx:H transistor; amorphous semiconductor; bottom-gate TFT; interface state effect; nitride passivation layer; thin-film transistor; top-gate TFT; Amorphous silicon; Dielectric substrates; Electron optics; Interface states; Optical films; Optical pumping; Optical sensors; Passivation; Semiconductor films; Thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.40965
  • Filename
    40965
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114707