Title :
Optimum crystallographic orientation of submicrometer CMOS devices operated at low temperatures
Author :
Aoki, Masaaki ; Yano, Kazuo ; Masuhara, Toshiaki ; Ikeda, Syuji ; Meguro, Satoshi ; Aoki, Masaki ; Yano, Ken´ichi ; Masuhara, T. ; Ikeda, Shoji ; Meguro, Sakae
Author_Institution :
Hitachi Ltd., Kokubunji, Tokyo, Japan
fDate :
1/1/1987 12:00:00 AM
Abstract :
The dependence of submicrometer-channel CMOS performance on surface orientation is measured for LDD devices at both 300 and 77 K. Special emphasis is placed on determining the optimum crystalline plane for CMOS operating at low temperatures (CRYO-CMOS). A comparison of transistor parameters is experimentally made between
Keywords :
CMOS technology; Crystallization; Crystallography; Degradation; Energy consumption; Hot carriers; MOS devices; MOSFETs; Temperature dependence; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.22884
