DocumentCode :
1114770
Title :
Frequency response of 1.3µm InGaAsP high speed semiconductor lasers
Author :
Olshansky, Robert ; Hill, Paul ; Lanzisera, Vincent ; Powazinik, William
Author_Institution :
GTE Laboratories,Waltham,MA
Volume :
23
Issue :
9
fYear :
1987
fDate :
9/1/1987 12:00:00 AM
Firstpage :
1410
Lastpage :
1418
Abstract :
The frequency response of a group of 1.3 μm InGaAsP vapor-phase-regrown buried heterostructure lasers of various cavity lengths is analyzed by fitting the measured response curves. The dependence of resonant frequency f0 and damping rate 
on bias power is determined. The differential gain coefficient for InGaAsP is determined as 
cm2. The damping rate is found to be proportional to the square of the resonant frequency with a proportionality factor which is independent of device geometry and facet reflectivity. The existence of such a universal relationship between and f0 and the observed magnitude of the damping rate is explained by the interband relaxation model of nonlinear gain.
on bias power is determined. The differential gain coefficient for InGaAsP is determined as cm2. The damping rate is found to be proportional to the square of the resonant frequency with a proportionality factor which is independent of device geometry and facet reflectivity. The existence of such a universal relationship between and fKeywords :
Gallium materials/lasers; Laser resonators; Frequency measurement; Frequency response; Indium gallium arsenide; Laser modes; Laser noise; Masers; PIN photodiodes; Photodetectors; Semiconductor lasers; Velocity measurement;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1987.1073527
Filename :
1073527
Link To Document :
