Title :
High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film
Author :
Sera, Kenji ; Okumura, Fujio ; Uchida, Hiroyuki ; Itoh, Shinji ; Kaneko, Setsuo ; Hotta, Kazuaki
Author_Institution :
NEC Corp., Kawasaki, Japan
fDate :
12/1/1989 12:00:00 AM
Abstract :
High-performance staggered a-Si:H and poly-Si thin-film transistors (TFTs) fabricated by XeCl excimer laser annealing of a-Si:H films are discussed. The field-effect mobility of poly-Si TFT is 102 cm 2/V-s, and that of a-Si:H TFT is 0.23 cm2/V-s. Their drain current on/off ratios are over 106. Except for the crystallization, the fabrication process was the same for both of them. This process appears extremely promising for the integration of matrix elements and peripheral drivers in a single substrate
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; insulated gate field effect transistors; laser beam annealing; silicon; thin film transistors; Si:H thin film transistor; XeCl excimer laser annealing; amorphous semiconductors; drain current on/off ratios; fabrication process; field-effect mobility; peripheral drivers; polysilicon TFTs; staggered TFT; Annealing; Crystallization; Driver circuits; Leakage current; Optical device fabrication; Optical pulses; Pulsed laser deposition; Pump lasers; Substrates; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
