• DocumentCode
    1114886
  • Title

    Interface states of modulation-doped AlGaAs/GaAs heterostructures

  • Author

    Chung, Sang-Koo ; Wu, Y. ; Wang, K.L. ; Sheng, N.H. ; Lee, C.P. ; Miller, D.L.

  • Author_Institution
    Ajou University, Suwon, Korea
  • Volume
    34
  • Issue
    2
  • fYear
    1987
  • fDate
    2/1/1987 12:00:00 AM
  • Firstpage
    149
  • Lastpage
    153
  • Abstract
    We have used the admittance spectroscopy to investigate interface states associated with heterojunction of modulation-doped AlGaAs/GaAs FET´s. Anomalous frequency dispersion of the capacitance was observed. The results of the measurements were interpreted in terms of an equivalent circuit containing a series resistance of the two-dimensional electron gas in the ungated region between the gate and the source and drain electrodes. The maximum density of the interface states was found to be 1.3 × 1012cm-2. eV-1around 0.13 eV below the Ecedge of GaAs.
  • Keywords
    Admittance; Capacitance; Electrical resistance measurement; Epitaxial layers; FETs; Frequency; Gallium arsenide; Heterojunctions; Interface states; Spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.22900
  • Filename
    1486611
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114886