• DocumentCode
    1114927
  • Title

    Design of enhanced Schottky-barrier AlGaAs/GaAs MODFET´s using highly doped p+surface layers

  • Author

    Priddy, Kevin L. ; Kitchen, Donald R. ; Grzyb, Joseph A. ; Litton, C.W. ; Henderson, Timothy S. ; Peng, Chin-Kun ; Kopp, William F. ; Morkoc, Hadis

  • Author_Institution
    AFWAL/AAWD Wright-Patterson AFB, OH
  • Volume
    34
  • Issue
    2
  • fYear
    1987
  • fDate
    2/1/1987 12:00:00 AM
  • Firstpage
    175
  • Lastpage
    180
  • Abstract
    The design and performance of enhanced Schottky-barrier height modulation-doped AlGaAs/GaAs field-effect transistors (ESMODFET´s) is discussed. Results are presented showing that the addition of a thin highly doped p+layer under the gate can increase the forward biased gate turn-on voltage from 0.8 V (conventional MODFET) to as high as 1.6 V. A mathematical model is presented that predicts the thickness and doping of the heterostructure layers required to obtain a given threshold voltage and effective Schottky-barrier height. It is predicted that this enhanced Schottky barrier will allow increased gate-voltage swings and thus significantly improve the noise margin of enhancement-mode MODFET circuits.
  • Keywords
    Circuit noise; Doping; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MODFETs; Mathematical model; Schottky barriers; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.22904
  • Filename
    1486615
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114927