DocumentCode
1114939
Title
Sidegating in GaAs current limiters
Author
Roach, James W. ; Wieder, H.H. ; Zuleeg, R.
Author_Institution
University of California, San Diego, La Jolla, CA
Volume
34
Issue
2
fYear
1987
fDate
2/1/1987 12:00:00 AM
Firstpage
181
Lastpage
184
Abstract
Potentials of several volts or less applied to the sidegate contact of an ion-implanted GaAs current limiter cause a decrease in the channel current, in both the linear and Saturated modes of operation. Larger sidegate potentials have the opposite effect due to the addition of a large substrate leakage current, and cause an apparent shift in the impact-ionization threshold of the channel current.
Keywords
Current limiters; Gallium arsenide; Helium; Leakage current; Microwave FET integrated circuits; Resistors; Temperature measurement; Very large scale integration; Voltage; Wavelength measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.22905
Filename
1486616
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