Two-dimensional impurity profiling with emission computed tomography techniques

Author

Goodwin-johansson, Scott H. ; Subrahmanyan, Ravi ; Floyd, Carey E. ; Massoud, Hisham Z.

Author_Institution

Duke Univ., Durham, NC, USA

Volume

8

Issue

4

fYear

1989

fDate

4/1/1989 12:00:00 AM

Firstpage

323

Lastpage

335

Abstract

A technique for the determination of two-dimensional impurity profiles in silicon using methods for emission computed tomography is presented. Several one-dimensional impurity profiles obtained for different directions through the sample are used to reconstruct the two-dimensional profile. A simulation study of the experiment is described, and effects of various experimental and reconstruction parameters are discussed. Reconstructions of an area of 4 μm×4 μm from thirteen one-dimensional measurements, with a resolution of 1000 Å, are numerically possible

Keywords

computerised tomography; diffusion in solids; doping profiles; electronic engineering computing; elemental semiconductors; impurity distribution; physics computing; semiconductor doping; silicon; 2D diffusion profile; Si; emission computed tomography techniques; one-dimensional measurements; reconstruction parameters; semiconductor doping; simulation; two-dimensional impurity profiles; Area measurement; Computational modeling; Computed tomography; Geometry; Helium; Impurities; Length measurement; Microelectronics; Solid modeling; Transmission electron microscopy;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.29587

Filename

29587