A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs

Author

Venturi, Franco ; Smith, R. Kent ; Sangiorgi, Enrico C. ; Pinto, Mark R. ; Ricco, Bruno

Author_Institution

Dept. of Electron., Bologna Univ., Italy

Volume

8

Issue

4

fYear

1989

fDate

4/1/1989 12:00:00 AM

Firstpage

360

Lastpage

369

Abstract

An efficient self-consistent device simulator coupling Poisson equation and Monte Carlo transport suitable for general silicon devices, including those with regions of high doping/carrier densities, is discussed. Key features include an original iteration scheme and an almost complete vectorization of the program. The simulator has been used to characterize nonequilibrium effects in deep submicron nMOSFETs. Substantial overshoot effects are noticeable at gate lengths of 0.25 μm at room temperatures

Keywords

Monte Carlo methods; digital simulation; electronic engineering computing; insulated gate field effect transistors; iterative methods; parallel algorithms; semiconductor device models; 0.25 micron; Monte Carlo transport; Poisson equation; Si; gate lengths; general purpose device simulator; high carrier densities; high doping; iteration scheme; n-channel MOSFETs; nMOSFETs; overshoot effects; parallel algorithm; program vectorisation; submicron devices; Boltzmann equation; Geometry; History; Hot carriers; MOSFET circuits; Microscopy; Monte Carlo methods; Particle scattering; Poisson equations; Silicon devices;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.29590

Filename

29590