Title :
A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs
Author :
Venturi, Franco ; Smith, R. Kent ; Sangiorgi, Enrico C. ; Pinto, Mark R. ; Ricco, Bruno
Author_Institution :
Dept. of Electron., Bologna Univ., Italy
fDate :
4/1/1989 12:00:00 AM
Abstract :
An efficient self-consistent device simulator coupling Poisson equation and Monte Carlo transport suitable for general silicon devices, including those with regions of high doping/carrier densities, is discussed. Key features include an original iteration scheme and an almost complete vectorization of the program. The simulator has been used to characterize nonequilibrium effects in deep submicron nMOSFETs. Substantial overshoot effects are noticeable at gate lengths of 0.25 μm at room temperatures
Keywords :
Monte Carlo methods; digital simulation; electronic engineering computing; insulated gate field effect transistors; iterative methods; parallel algorithms; semiconductor device models; 0.25 micron; Monte Carlo transport; Poisson equation; Si; gate lengths; general purpose device simulator; high carrier densities; high doping; iteration scheme; n-channel MOSFETs; nMOSFETs; overshoot effects; parallel algorithm; program vectorisation; submicron devices; Boltzmann equation; Geometry; History; Hot carriers; MOSFET circuits; Microscopy; Monte Carlo methods; Particle scattering; Poisson equations; Silicon devices;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
