DocumentCode :
1115182
Title :
A non-quasi-static analysis of the transient behavior of the long-channel most valid in all regions of operation
Author :
Mancini, Paolo ; Turchetti, Claudio ; Masetti, Guido
Author_Institution :
SGS Microelectronics, Agrate Brianza, Italy
Volume :
34
Issue :
2
fYear :
1987
fDate :
2/1/1987 12:00:00 AM
Firstpage :
325
Lastpage :
334
Abstract :
A four-terminal non-quasi-static transient analysis of the intrinsic long-channel MOSFET is presented. The analysis, which is valid for arbitrary time-varying voltages applied to the device terminals, has been developed on the basis of a model that holds in all the operating regimes of the device (weak, moderate, and strong inversion). The achieved charge and current behaviors significantly differ from quasi-static results when fast rising (or failing) voltages are applied to the device. The different role played by the drift and the diffusion components of the channel current during the transients is discussed. It is also shown that the proposed approach is in good agreement with available experimental transient measurements.
Keywords :
Capacitance; Dielectric substrates; Electrons; MOSFET circuits; Microelectronics; Solid state circuits; Steady-state; Temperature; Transient analysis; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.22926
Filename :
1486637
Link To Document :
بازگشت