Safe operating area for 1200-V nonlatchup bipolar-mode MOSFET´s

This paper reports the safe operating area (SOA) for 1200-V nonlatchup bipolar-mode MOSFET\´s. The measured SOA limit, in terms of current density and drain-voltage product, reached 2.5 × 10⁵W/cm²for 125°C-case temperature and 10-µs pulse operation conditions. It exceeded even the so-called "avalanche limit" for n-p-n bipolar transistors when the measurement was carried out under 25°C-case temperature conditions. These SOA\´s enable device protection from an abnormally large drain-current surge.