Title :
Extracting transistor changes from device simulations by gradient fitting
Author :
Coughran, William M., Jr. ; Fichtner, Wolfgang ; Grosse, Eric
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
4/1/1989 12:00:00 AM
Abstract :
The results of small-signal or transient analyses from a conventional device simulator (or measured data) can be combined with gradient-fitting techniques to produce smooth spline-based MOSFET charge models for circuit simulation. These techniques are also applicable to shape-from-shading problems. Results based on simulations of some small devices are presented. The comparative efficiencies of the small-signal and transient approach are discussed as well as the relation between the so-called small- and large-signal charges. The role of spline-based table models as against compact analytical models is considered
Keywords :
circuit analysis computing; electronic engineering computing; insulated gate field effect transistors; semiconductor device models; splines (mathematics); transient response; MOSFET charge models; circuit simulation; device simulations; gradient fitting; shape-from-shading problems; small signal analysis; spline-based table models; transient analyses; transistor charges extractions; Analytical models; Capacitance; Charge carrier processes; Circuit simulation; Computational modeling; Data mining; Equations; MOSFETs; Transient analysis; Voltage;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
