• DocumentCode
    1115318
  • Title

    Gain-bandwidth-limited response in long-wavelength avalanche photodiodes

  • Author

    Forrest, Stephen R.

  • Author_Institution
    Bell Lab., Murray Hill, NJ, USA
  • Volume
    2
  • Issue
    1
  • fYear
    1984
  • fDate
    2/1/1984 12:00:00 AM
  • Firstpage
    34
  • Lastpage
    39
  • Abstract
    The gain-bandwidth(GB)-limited response of In0.53Ga0.47As/ InP heterostructure avalanche photodiodes (APD\´s) and related devices used in long-wavelength digital optical receivers is calculated. We find that these diodes, as currently designed, are useful at bit rates B l\\sim 2 Gbit/s when employed in conjunction with high-sensitivity optical receivers. Response at higher bit rates may be obtained depending on the details of device design. On the other hand, use of poor-quality receivers that require moderate-to-high values of optimum gain can significantly degrade the performance of heterostructure APD\´s at high bit rates due to GB limitations. We also show that APD receiver bandwidth can be expressed in terms of the sensitivity obtained using the receiver in conjunction with a p-i-n photodiode. It is found that the response speed of optimized receivers is lowest for an APD effective ionization rate ratio of k = 0.5 .
  • Keywords
    Avalanche photodiodes; Avalanche photodiodes; Bandwidth; Bit rate; Degradation; Indium phosphide; Optical design; Optical receivers; P-i-n diodes; PIN photodiodes; Performance gain;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.1984.1073576
  • Filename
    1073576