• DocumentCode
    1115380
  • Title

    Validity of the quasi-transparent model of the current injected into heavily doped emitters of bipolar devices

  • Author

    Alamo, Jesus A del ; Swanson, Richarm M.

  • Author_Institution
    NTT Electrical Communications Laboratories, Atsugi-shi, Kanagawa, Japan
  • Volume
    34
  • Issue
    2
  • fYear
    1987
  • fDate
    2/1/1987 12:00:00 AM
  • Firstpage
    455
  • Lastpage
    456
  • Abstract
    A simple criterion that permits one to assess the accuracy of the calculation of the current injected into a heavily doped emitter using the quasi-transparent model is presented. The criterion provides an upper limit of the error incurred by the approximation when compared to an exact computer solution, without requiring any additional calculations.
  • Keywords
    Accuracy; Analytical models; Bipolar transistors; Doping; Equations; Laboratories; Photovoltaic cells; Physics; Semiconductor process modeling; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.22945
  • Filename
    1486656
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1115380