Title :
Successive oxide breakdown statistics: correlation effects, reliability methodologies, and their limits
Author :
Suñé, Jordi ; Wu, Ernest Y. ; Lai, Wing L.
Author_Institution :
Departament d´´Enginyeria Electronica, Univ. Autonoma de Barcelona, Spain
Abstract :
This paper deals with the statistics of successive oxide breakdown (BD) events in MOS devices. Correlation effects between these successive events are experimentally related to the statistics of BD current jumps, thus suggesting that they are related to lateral propagation of the BD path. The application of the successive BD theory to chip reliability assessment is discussed. Several failure criteria and the related reliability methodologies are considered and some of their limits are established.
Keywords :
MOS integrated circuits; correlation theory; reliability theory; semiconductor device breakdown; statistical analysis; MOS devices; breakdown current jumps; breakdown path; chip reliability assessment; correlation effects; dielectric breakdown; oxide breakdown statistics; reliability methodologies; reliability theory; successive breakdown theory; successive oxide breakdown events; Dielectrics; Digital circuits; Electric breakdown; FETs; Helium; MOS devices; Microelectronics; Reliability theory; Statistics; Testing; BD; Dielectric breakdown; MOS devices; reliability theory;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.835986
