Title :
On the physical mechanism of the NROM memory erase
Author :
Larcher, Luca ; Pavan, Paolo ; Eitan, Boaz
Author_Institution :
Dipt. di Sci. e Metodi dell´´Ingegneria, Univ. di Modena e Reggio Emilia, Italy
Abstract :
The purpose of this paper is to investigate the physical mechanism of NROM memory erase. Three conduction mechanisms potentially responsible of NROM erase will be analyzed (tunneling and emission of electrons through both bottom and top oxide, tunneling and injection of holes over the bottom oxide barrier) by means of standard two-dimensional simulations and ad-hoc models reproducing hole and electron transport mechanisms across the oxide not included in standard device simulators. Hot-hole injection will be identified as the actual conduction mechanism of NROM erase, and two compact models capable to describe the main characteristics of NROM erase current will be developed.
Keywords :
charge injection; electron emission; hole traps; hot carriers; integrated circuit modelling; integrated memory circuits; read-only storage; tunnelling; NROM erase conduction mechanism; NROM memory erase; ad-hoc models; bottom oxide barrier; conduction mechanisms; device simulations; electron emission; electron transport mechanisms; electron tunneling; flash memories; hole transport mechanisms; hot-hole injection; physical mechanism; semiconductor memories; standard device simulators; two-dimensional simulations; Analytical models; Charge carrier processes; Degradation; Electron emission; Electron traps; Flash memory; Hot carriers; MONOS devices; SONOS devices; Tunneling; Device simulations; flash memories; semiconductor device reliability; semiconductor memories;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.834897
