• DocumentCode
    1115570
  • Title

    Direct silicidation of Co on Si by rapid thermal annealing

  • Author

    Tabasky, Marvin ; Bulat, Emel S. ; Ditchek, Brian M. ; Sullivan, Maureen A. ; Shatas, Steven C.

  • Author_Institution
    GTE Laboratories, Inc., Waltham, MA
  • Volume
    34
  • Issue
    3
  • fYear
    1987
  • fDate
    3/1/1987 12:00:00 AM
  • Firstpage
    548
  • Lastpage
    553
  • Abstract
    Rapid thermal annealing is used to form cobalt silicide directly on unimplanted as well as B-, As-, and P-implanted wafers. The films are characterized by sheet resistance, X-ray diffraction, SEM, TEM, SIMS, and contact resistance measurements. The direct silicidation of Co on Si by rapid thermal annealing yields smooth low-resistivity films with minimal dopant redistribution.
  • Keywords
    Cobalt; Conductivity; Electrical resistance measurement; Electrons; Metallization; Rapid thermal annealing; Silicidation; Silicides; Temperature; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.22962
  • Filename
    1486673
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1115570