Title :
Direct silicidation of Co on Si by rapid thermal annealing
Author :
Tabasky, Marvin ; Bulat, Emel S. ; Ditchek, Brian M. ; Sullivan, Maureen A. ; Shatas, Steven C.
Author_Institution :
GTE Laboratories, Inc., Waltham, MA
fDate :
3/1/1987 12:00:00 AM
Abstract :
Rapid thermal annealing is used to form cobalt silicide directly on unimplanted as well as B-, As-, and P-implanted wafers. The films are characterized by sheet resistance, X-ray diffraction, SEM, TEM, SIMS, and contact resistance measurements. The direct silicidation of Co on Si by rapid thermal annealing yields smooth low-resistivity films with minimal dopant redistribution.
Keywords :
Cobalt; Conductivity; Electrical resistance measurement; Electrons; Metallization; Rapid thermal annealing; Silicidation; Silicides; Temperature; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.22962
