Title :
Basic operation of novel ferroelectric CMOS circuits
Author :
Takahashi, M. ; Horiuchi, T. ; Li, Q.-H. ; Wang, S. ; Yun, K.Y. ; Sakai, S.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
Abstract :
A nonvolatile ferroelectric complementary metal-oxide-semiconductor (CMOS) circuit with both logic and memory functions is proposed as a new application of ferroelectric field effect transistors. The logic and memory operations of a NOT-logic ferroelectric CMOS device is demonstrated. Nondestructive readings of high and low output voltage levels of the device were performed. Data retention was measured up to 105 s (1.2 days).
Keywords :
CMOS integrated circuits; ferroelectric devices; field effect transistors; logic circuits; NOT-logic ferroelectric CMOS device; complementary metal-oxide-semiconductor circuit; ferroelectric field effect transistors; logic function; memory function; nonvolatile ferroelectric CMOS circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20083230
