Title :
Hot hole degradation effects in lateral nDMOS transistors
Author :
Moens, Peter ; Van den Bosch, Geert ; De Keukeleire, Catherine ; Degraeve, Robin ; Tack, Marnix ; Groeseneken, Guido
Author_Institution :
AMI Semicond. Belgium BVBA, Oudenaarde, Belgium
Abstract :
The degradation of a n-type lateral DMOS transistor is shown to be related to the injection of hot holes in the drift region field oxide. The saturation effects observed in the parameter shifts are reproduced by a new degradation model using the bulk current as the driving force. The dependency of the hot hole injection on the layout of the LDMOS transistors is studied.
Keywords :
MOS integrated circuits; MOSFET; charge injection; hot carriers; LDMOS transistors; bulk current; degradation model; drift region field oxide; hot carrier; hot hole degradation effects; hot hole injection; lateral nDMOS transistors; n-type lateral DMOS transistor; parameter shifts; saturation effects; CMOS process; Costs; Degradation; Hot carriers; Implants; Low voltage; MOS devices; Manufacturing; Semiconductor optical amplifiers; Telecommunications; Degradation; LDMOS; hot carrier;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.834913
