Title :
Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures
Author :
Wen, T.C. ; Chang, S.J. ; Lee, C.T. ; Lai, W.C. ; Sheu, J.K.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Modulation doped Al0.12Ga0.88N-GaN superlattice structures were used to spread pulse current in nitride-based light emitting diodes (LEDs). Although the 20-mA electroluminescence (EL) intensity of the LEDs with modulation-doped AlGaN-GaN superlattice structures was found to be 10% smaller than that of the conventional LEDs, it was found that LEDs with the AlGaN-GaN superlattice structures could all endure a 2000-V reverse electrostatic discharge (ESD) pulse voltage. Some LEDs can even survive with an 8000-V reverse ESD pulse voltage, which is equivalent to "Class 3B" of Human Body Mode testing.
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; electrostatic discharge; gallium compounds; light emitting diodes; semiconductor doping; semiconductor superlattices; 20 mA; 2000 V; 8000 V; Al0.12Ga0.88N-GaN; current spreading; electroluminescence; human body mode testing; light emitting diodes; modulation-doped superlattice structures; nitride-based LEDs; pulse current; reverse ESD pulse voltage; reverse electrostatic discharge; Aluminum gallium nitride; Electroluminescence; Electrostatic discharge; Epitaxial layers; Humans; Light emitting diodes; Pulse modulation; Superlattices; Testing; Voltage; Current spreading; EL; ESD; LED; electroluminescence; electrostatic discharge; light-emitting diodes; modulation-doped AlGaN–GaN superlattice structures;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.835985
