Si-based receivers for optical data links

Author

Jalali, B. ; Naval, L. ; Levi, A.F.J.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

12

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

930

Lastpage

935

Abstract

We present results for Ge_xSi_1-x waveguide pin detectors grown by rapid thermal chemical vapor deposition (RTCVD). Detectors with multiple Ge_0.29Si_0.71 absorption layers show an internal quantum efficiency of 33% at λ=1.3 μm with a dark current of 27 pA/μm². The external quantum efficiency is limited to 7% by the fiber-to-waveguide coupling efficiency. The output eye diagram for a hybrid λ=1.3 μm silicon receiver at 500 Mb/s is demonstrated. Prospects of a silicon-based optoelectronic receiver array technology are discussed

Keywords

Ge-Si alloys; chemical vapour deposition; infrared detectors; optical links; optical receivers; optical waveguides; rapid thermal processing; semiconductor growth; semiconductor materials; 1.3 micron; 33 percent; 500 Mbit/s; 7 percent; Ge_0.29Si_0.71; Ge_xSi_1-x waveguide pin detectors; external quantum efficiency; fiber-to-waveguide coupling efficiency; internal quantum efficiency; multiple absorption layers; optical data links; output eye diagram; rapid thermal chemical vapor deposition; silicon-based optoelectronic receiver array; Absorption; Clocks; Costs; Fiber lasers; Frequency; High speed optical techniques; Optical interconnections; Optical receivers; Optical waveguides; Silicon;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.296180

Filename

296180