• DocumentCode
    1115806
  • Title

    1 μm gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 μm

  • Author

    Hill, R.J.W. ; Droopad, R. ; Moran, D.A.J. ; Li, X. ; Zhou, H. ; Macintyre, D. ; Thorns, S. ; Ignatova, O. ; Asenov, A. ; Rajagopalan, K. ; Fejes, P. ; Thayne, I.G. ; Passlack, M.

  • Author_Institution
    Univ. of Glasgow, Glasgow
  • Volume
    44
  • Issue
    7
  • fYear
    2008
  • Firstpage
    498
  • Lastpage
    500
  • Abstract
    The first demonstration of implant-free, flatband-mode In0.75Ga0.25As channel n-MOSFETs is reported. These 1 mum gate length MOSFETs, fabricated on a structure with average mobility of 7720 cm /Vs and sheet carrier concentration of 3.3 times 10 cm-2 , utilise a Pt gate, a high-k dielectric (k sime 20), and a delta-doped InAlAs/InGaAs/InAlAs heterostructure. The devices have a typical maximum drive current (Id,sat) of 933 muA/mum, extrinsic transconductance (gm) of 737 muS/mum, gate leakage (Ig) of 40 pA, and on-resistance (Ron) of 555 Omega .mum. The gm and Ron figures of merit are the best reported to date for any III-V MOSFET.
  • Keywords
    MOSFET; In0.75Ga0.25As; current 40 pA; flatband-mode channel n-MOSFET; implant-free channel n-MOSFET; resistance 555 ohm; sheet carrier concentration; substrate; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20080470
  • Filename
    4479566
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1115806