Errata to “High-Aspect-Ratio Structures for Efficient Light Absorption and Carrier Transport in InGaAs/GaAsP Multiple Quantum Well Solar Cells” [Apr 13 859-867]

Author

Fujii, Hiromasa ; Wang, Yunpeng ; Watanabe, Kentaroh ; Sugiyama, Masakazu ; Nakano, Yoshiaki

Author_Institution

Volume

Issue

fYear

2015

fDate

Mar-15

Firstpage

704

Lastpage

704

Abstract

We have found several errors in figures in the published article [ibid., vol. 3, no. 2, pp. 859-867, Apr. 2013). Corrections are presented here.

Keywords

Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Quantum well devices; Tunneling;

fLanguage

English

Journal_Title

Photovoltaics, IEEE Journal of

Publisher

ieee

ISSN

2156-3381

Type

DOI

10.1109/JPHOTOV.2014.2382980

Filename

6999924

Link To Document