InGaAsP InP current confinement mesa substrate buried heterostructure laser diode fabricated by one-step liquid-phase epitaxy

Author

Sugimoto, Mitsunori ; Suzuki, Akira ; Nomura, Hidenori ; Lang, Roy

Author_Institution

NEC Corporation, Miyamae-ku, Kawasaki-city, Japan

Volume

2

Issue

4

fYear

1984

fDate

8/1/1984 12:00:00 AM

Firstpage

496

Lastpage

503

Abstract

New InGaAsP/InP buried heterostructure laser diodes fabricated by one-step liquid-phase epitaxy are described, in which the InGaAsP active region completely embedded in InP is grown on the top of the mesa stripe formed on the InP substrate while, simultaneously, current confinement structure is automatically formed on both sides of the mesa stripe. These current confinement mesa substrate buried heterostructure laser diodes (CCM-LD´s) have current confinement structure which very effectively blocks unwanted leakage current bypassing the light emitting region which has enabled laser operation with a threshold current as low as 20 mA, 70-mW maximum CW output at room temperature, and 125°C maximum CW operation temperature. Life tests over 6000-h CW operation at 70°C and 5 mW/facet have confirmed good reliability of these devices.

Keywords

Gallium materials/lasers; Diode lasers; Epitaxial growth; Indium phosphide; Laser modes; Laser stability; Light sources; Optical fiber communication; Substrates; Temperature sensors; Threshold current;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.1984.1073634

Filename

1073634