Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry

Author

Yonghun Kim ; Young Gon Lee ; Ukjin Jung ; Jin Ju Kim ; Minhyeok Choe ; Kyong Taek Lee ; Sangwoo Pae ; Jongwoo Park ; Byoung Hun Lee

Author_Institution

Center for Emerging Electr. Devices & Syst., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

Volume

62

Issue

4

fYear

2015

fDate

Apr-15

Firstpage

1092

Lastpage

1097

Abstract

The effective mobility ( $\\mu _{\\rm { {eff}}}$ ) of MOSFETs with ultrathin high- $k$ gate dielectric ( ${\\rm EOT}= 0.85$ nm) has been successfully extracted using a time domain reflectometry method. A ground–signal–ground–ground probe configuration is used to analyze the gate-to-channel capacitance ( $C_{\\rm { {gc}}}$ ), gate-to-bulk capacitance ( $C_{\\rm { {gb}}}$ ), and total gate capacitance ( $C_{g}$ ) without a complex RF test structure. Using this method, the effective mobility can be extracted even in the presence of a high gate leakage current ( $\\sim 30$ A/cm $^{\\rm { {2}}}$ ) when the conventional split capacitance–voltage method using an impedance analyzer cannot be applied.

Keywords

MOSFET; capacitance measurement; carrier mobility; high-k dielectric thin films; leakage currents; semiconductor device testing; time-domain reflectometry; effective mobility extraction; gate-to-bulk capacitance; gate-to-channel capacitance; ground-signal-ground-ground probe configuration; high gate leakage current; leaky gate dielectric; nMOSFET; size 0.85 nm; time domain reflectometry; total gate capacitance; ultrathin high-K gate dielectric; Capacitance; Dielectric measurement; Dielectrics; Logic gates; MOSFET; Probes; Transmission line measurements; Effective mobility; MOSFET; split capacitance???voltage ( $C$ ??? $V$ ); time domain reflectometry (TDR);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2404920

Filename

7064866