DocumentCode :
1116029
Title :
C2F6reactive ion-beam etching of LiNbO3and Nb2O5and their application to optical waveguides
Author :
Zhang, Bei ; Forouhar, Siamak ; Huang, S.Y. ; Chang, William S C
Author_Institution :
University of California, San Diego, La Jolla, CA, USA
Volume :
2
Issue :
4
fYear :
1984
fDate :
8/1/1984 12:00:00 AM
Firstpage :
528
Lastpage :
530
Abstract :
Properties of C2F6(freon 116) reactive ion-beam etching (RIBE) of LiNbO3, Ti-indiffused LiNbO3, and sputter-deposited Nb2O5film on LiNbO3are reported. A maximum differential etching ratio of approximately 5:1 has been measured for LiNbO3and the AZ 1350B Shipley photoresist. We have used this etching technique to fabricate diffraction gratings on both Ti-indiffused LiNbO3and Nb2O5- LiNbO3waveguides with measured throughput efficiencies in excess of 85 percent.
Keywords :
Optical planar waveguides; Planar optical waveguide; Chemical processes; Control systems; Dry etching; Ion beams; Optical films; Optical waveguides; Resists; Sputter etching; Weight control; Wet etching;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1984.1073644
Filename :
1073644
Link To Document :
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