DocumentCode :
1116044
Title :
An SOI voltage-controlled bipolar-MOS device
Author :
Colinge, Jean-Pierre
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, CA
Volume :
34
Issue :
4
fYear :
1987
fDate :
4/1/1987 12:00:00 AM
Firstpage :
845
Lastpage :
849
Abstract :
This paper describes a new operation mode of the SOI MOSFET. Connecting the floating substrate to the gate in a short-channel SOI MOSFET allows lateral bipolar current to be added to the MOS channel current and thereby enhances the current drive capability of the device. Part of the bipolar current emitted by the source terminal merges into the channel before reaching the drain, which renders the base width substantially shorter than the gate length. This novel operating mode of a short-channel SOI transistor is particularly attractive for high-speed operation, since the device is capable of both reduced voltage swing operation and high current drive, n-p-n and p-n-p devices, as well as complementary inverters have been successfully fabricated.
Keywords :
Delay effects; Joining processes; Logic circuits; Logic devices; MOS devices; MOSFET circuits; Parasitic capacitance; Pulse inverters; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23005
Filename :
1486716
Link To Document :
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