Title :
An accurate CAD model for the ambipolar a-Si: H TFT
Author :
Neudeck, Gerold W. ; Chung, Kyo Y. ; Bare, Harold F.
Author_Institution :
Purdue University, West Lafayette, IN
fDate :
4/1/1987 12:00:00 AM
Abstract :
The ambipolar output drain current versus drain voltage characteristics of hydrogenated amorphous silicon thin-film transistors are modeled by a method intended for use in computer-aided design programs. An accurate model has been developed that uses a modified experimental sheet conductivity curve to predict the output drain characteristics over many orders of magnitude of the drain current in both the n-channel and p-channel modes of operation. Analytical expressions for the drain current are developed.
Keywords :
Amorphous silicon; Channel bank filters; Circuits; Conductivity; Design automation; Equations; Liquid crystal displays; Sensor arrays; Thin film transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23008
