Ion-implanted Si MESFET ring oscillators

Silicon MESFET ring oscillators have been successfully fabricated on low- and high-resistivity substrates. Contact printing was used as optical lithography to produce gate lengths of 1 µm. Despite the simple fabrication process the ring oscillators exhibited switching times of 0.7 ns at a speed-power product of 35 fJ. The degradation of device performance by backgating and the dependence on substrate doping was investigated.