High current p/p/sup +/-diamond Schottky diode

Author

Ebert, W. ; Vescan, A. ; Borst, T.H. ; Kohn, E.

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

Volume

15

Issue

8

fYear

1994

Firstpage

289

Lastpage

291

Abstract

Epitaxial p-type Schottky diodes have been fabricated on p/sup +/-substrate. While the activation energy of the epitaxial layer conductivity is 390 meV, that of the substrate is only 50 meV. At forward bias the substrate conductivity dominates above 150/spl deg/C, leading for a 5/spl times/10/sup -5/ cm/sup 2/ area contact to a series resistance of 14 /spl Omega/ at 150/spl deg/C reducing to 8 /spl Omega/ at 500/spl deg/C. To our knowledge, this is the lowest series resistance reported so far for a diamond Schottky diode enabling extremely high current densities of 10/sup 3/ A/cm and a current rectification ratio at /spl plusmn/2 V of 10/sup 5/ making these diodes already attractive as high temperature rectifiers.<>

Keywords

Schottky-barrier diodes; current density; diamond; power electronics; semiconductor technology; solid-state rectifiers; 14 ohm; 150 C; 390 meV; 50 meV; 500 C; 8 ohm; C; activation energy; current rectification ratio; epitaxial layer conductivity; epitaxial p-type Schottky diodes; extremely high current densities; forward bias; high current p/p/sup +/-diamond Schottky diode; high temperature rectifiers; p/sup +/-substrate; series resistance; substrate conductivity; Boron; Conductivity; Contact resistance; Epitaxial layers; Performance analysis; Plasma temperature; Rectifiers; Schottky diodes; Semiconductor diodes; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.296219

Filename

296219