Title :
A new technology for epitaxial II-VI compound semiconductor devices
Author :
Jones, A.P.C. ; Wright, P.J. ; Brinkman, A.W. ; Russell, G.J. ; Woods, J. ; Cockayne, B.
Author_Institution :
University of Durham, Durham, United Kingdom
fDate :
4/1/1987 12:00:00 AM
Abstract :
ZnS and ZnSe are grown by metalorganic chemical-vapor deposition over GaAs and GaAlAs chemi-stop layers on a GaAs substrate. The III-V layers allow selective chemical removal of the substrate in order to expose the ZnS. The device allows investigation of the electrical and optical properties of epitaxial wide-gap II-VI compounds in the absence of any influence from the substrate material.
Keywords :
Chemicals; Contacts; Epitaxial layers; Fabrication; Gallium arsenide; MIS devices; MOCVD; Semiconductor devices; Substrates; Zinc compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23021
