• DocumentCode
    1116220
  • Title

    Depletion transistor threshold voltage as a process monitor

  • Author

    Burghard, Ronald A. ; El-Mansy, Youssef A.

  • Author_Institution
    Intel Corporation, Aloha, OR
  • Volume
    34
  • Issue
    4
  • fYear
    1987
  • fDate
    4/1/1987 12:00:00 AM
  • Firstpage
    940
  • Lastpage
    942
  • Abstract
    The substrate bias effect on threshold voltages can be extended to extract doping profiles on depletion devices. To obtain additional profile information near the surface, low level forward biasing of the source to substrate junction is utilized. The analysis is divided into the surface inversion region to obtain the channel doping and the depleted channel region to measure the substrate doping.
  • Keywords
    CMOS technology; Circuit analysis; Data mining; Doping profiles; FET integrated circuits; Integrated circuit measurements; Monitoring; Niobium; Threshold voltage; Voltage measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23023
  • Filename
    1486734
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1116220