Title :
High temperature DC and RF performance of p-type diamond MESFET: comparison with n-type GaAs MESFET
Author :
Shin, M.W. ; Trew, R.J. ; Bilbro, G.L.
Author_Institution :
Dept. of Electr. Eng. & Appl. Phys., Case Western Reserve Univ., Cleveland, OH, USA
Abstract :
The DC and RF performance of a p-type diamond MESFET is simulated and compared with the simulated performance of an n-type GaAs MESFET over the operating temperature range, 300-923 K. Power performance of a diamond MESFET is shown to improve with increasing temperature and to exceed that of a GaAs MESFET when operated at temperatures higher than 550 and At 923 K the simulated diamond MESFET produces about 0.8 W/mm of output power for an operating frequency of 5 GHz. Small signal current gain for a diamond MESFET is also found to increase with temperature. The cut-off frequency, f/sub T/, of a diamond MESFET at 923 K is comparable with that of a GaAs MESFET at room temperature. It is concluded that there are microwave power applications of MESFET´s in p-type diamond but otherwise conventional design is limited to high temperature.<>
Keywords :
Schottky gate field effect transistors; diamond; digital simulation; power transistors; 300 to 923 K; 5 GHz; 550 K; C; DC performance; GaAs; RF performance; cut-off frequency; diamond MESFET; high temperature; increasing temperature; microwave power applications; n-type GaAs MESFET; operating frequency; operating temperature range; output power; p-type diamond MESFET; power performance; simulated diamond MESFET; simulated performance; small signal current gain; Circuit simulation; Gallium arsenide; MESFETs; MISFETs; Microwave devices; Radio frequency; Semiconductivity; Temperature distribution; Thermal conductivity; Thin film devices;
Journal_Title :
Electron Device Letters, IEEE
