Title :
0.1 μm Schottky-collector AlAs/GaAs resonant tunneling diodes
Author :
Smith, R.P. ; Alien, S.T. ; Reddy, M. ; Martin, S.C. ; Liu, J. ; Muller, R.E. ; Rodwell, M.J.W.
Author_Institution :
Center for Space Microelectronics Technol., California Inst. of Technol., Pasadena, CA, USA
Abstract :
The Schottky-collector resonant tunneling diode (RTD) is an RTD with the normal N+ collector and ohmic contact replaced by a Schottky contact, thereby eliminating the associated parasitic resistance. With submicron Schottky contact dimensions, the remaining components of the parasitic series resistance can be greatly reduced, resulting in an increased maximum frequency of oscillation, fmax. AlAs/GaAs Schottky-collector RTDs were fabricated using 0.1 μm T-gate technology developed for high electron mobility transistors. From their measured dc and microwave parameters, and including the effect of the quantum well lifetime, fmax=900 GHz is computed.
Keywords :
III-V semiconductors; Schottky-barrier diodes; aluminium compounds; contact resistance; gallium arsenide; resonant tunnelling devices; tunnel diodes; 0.1 mum; 900 GHz; AlAs-GaAs; AlAs/GaAs resonant tunneling diodes; Schottky contact; Schottky-collector; T-gate technology; high electron mobility transistors; increased maximum oscillation frequency; microwave parameters; normal N+ collector; ohmic contact; parasitic resistance; parasitic series resistance; quantum well lifetime; submicron Schottky contact dimensions; Contact resistance; Frequency; Gallium arsenide; HEMTs; MODFETs; Ohmic contacts; Quantum computing; Resonant tunneling devices; Schottky barriers; Schottky diodes;
Journal_Title :
Electron Device Letters, IEEE
