Title :
Large-Format Voltage-Tunable Dual-Color Midwavelength Infrared Quantum-Well Infrared Photodetector Focal Plane Array
Author :
Kaldirim, M. ; Eker, S.U. ; Arslan, Y. ; Tumkaya, U. ; Besikci, C.
Author_Institution :
Middle East Tech. Univ., Ankara
fDate :
5/1/2008 12:00:00 AM
Abstract :
We report a large-format (640 times 512) voltage-tunable quantum-well infrared photodetector (QWIP) focal plane array (FPA) for dual-color imaging in the midwavelength infrared (3-5 mum) band. Voltage-tunable spectral response has been achieved through series connection of two eight-well stacks of AlGaAs-InGaAs epilayers grown by molecular beam epitaxy on GaAs substrate. The peak responsivity wavelength of the detectors is shifted from 4.1 mum (color 1) to 4.7 mum (color 2) as the bias is increased within the limit applicable by commercial read-out integrated circuits. The operability of the FPA is ~99.5% with noise equivalent temperature differences of ~60 and 30 mK (f/1.5) in color modes 1 and 2, respectively. To our knowledge, this is the first large-format voltage-tunable dual-color QWIP FPA reported for midwavelength thermal imaging.
Keywords :
III-V semiconductors; aluminium compounds; focal planes; gallium arsenide; image sensors; indium compounds; infrared detectors; photodetectors; quantum well devices; AlGaAs-InGaAs; FPA; color modes; dual-color imaging; focal plane array; large-format voltage-tunable quantum-well infrared photodetector; midwavelength infrared band; molecular beam epitaxy; noise equivalent temperature differences; peak responsivity wavelength; spectral response; wavelength 3 mum to 5 mum; Colored noise; Detectors; Gallium arsenide; Infrared imaging; Molecular beam epitaxial growth; Optical imaging; Photodetectors; Quantum wells; Substrates; Voltage; Focal plane array (FPA); infrared detector;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.920026