Title :
High performance low temperature polysilicon thin film transistor using ECR plasma thermal oxide as gate insulator
Author :
Lee, Jung-Yeal ; Han, Chul-Hi ; Kim, Choong-ki
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
Electron cyclotron resonance (ECR) plasma thermal oxide has been investigated as a gate insulator for low temperature (/spl les/600/spl deg/C) polysilicon thin-film transistors based on solid phase crystallization (SPC) method. The ECR plasma thermal oxide films grown on a polysilicon film has a relatively smooth interface with the polysilicon film when compared with the conventional thermal oxide and it shows good electrical characteristics. The fabricated poly-Si TFT´s without plasma hydrogenation exhibit field-effect mobilities of 80 (60) cm/sup 2//V/spl middot/s for n-channel and 69 (48) cm/sup 2//V/spl middot/s for p-channel respectively when using Si/sub 2/H/sub 6/(SiH/sub 4/) source gas for the deposition of active poly-Si films.<>
Keywords :
carrier mobility; electronic conduction in insulating thin films; elemental semiconductors; insulating thin films; plasma CVD; plasma CVD coatings; silicon; thin film transistors; 600 C; ECR plasma thermal oxide; Si-SiO/sub 2/; Si/sub 2/H/sub 6/; SiH/sub 4/; electron cyclotron resonance; field-effect mobilities; gate insulator; low temperature polysilicon; n-channel; p-channel; poly-Si TFT; solid phase crystallization; thin film transistor; Crystallization; Cyclotrons; Electric variables; Electrons; Insulation; Plasma properties; Plasma temperature; Resonance; Solids; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
