DocumentCode
1116282
Title
Threshold field and peak-valley velocity ratio in short samples of InP at 300 K
Author
Nag, B.R. ; Ahmed, S.R.
Author_Institution
Calcutta University, Calcutta, India
Volume
34
Issue
5
fYear
1987
fDate
5/1/1987 12:00:00 AM
Firstpage
953
Lastpage
956
Abstract
The transient and steady-state velocity-field characteristics of InP at 300 K are calculated for short samples by using a Monte Carlo model. It is found that the threshold field for negative differential resistance increases with a decrease in the sample length, but the peak-valley velocity ratio is almost independent of the sample length.
Keywords
Computational modeling; Diodes; Electrons; Impurities; Indium phosphide; Lattices; Monte Carlo methods; Scattering; Space charge; Steady-state;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23029
Filename
1486740
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