DocumentCode :
1116285
Title :
Gamma-Ray Irradiation-Enhanced Wet-Etching of Proton-Exchanged Lithium Niobate
Author :
Lai, Cheng-Chih ; Chang, Chin-Yu ; Wei, Yuan-Yaw ; Wang, Way-Seen
Author_Institution :
Nat. Taiwan Univ., Taipei
Volume :
20
Issue :
9
fYear :
2008
fDate :
5/1/2008 12:00:00 AM
Firstpage :
682
Lastpage :
684
Abstract :
Gamma-ray irradiation-enhanced wet-etching of proton-exchanged Z-cut Y-propagating LiNbO3 is presented. The etched ridge height of a sample with gamma-ray irradiation of intensity 650 krad/h on a LiNbO3 substrate for 30 min is three times larger than that without. Moreover, experimental results show the propagation loss values of Ti-indiffused LiNbO3 waveguides fabricated on the irradiated ridge structures are only slightly larger than those on the nonirradiated ones.
Keywords :
etching; gamma-ray effects; integrated optics; lithium compounds; optical fabrication; optical losses; optical waveguides; ridge waveguides; titanium; LiNbO3:Ti; Ti-indiffused waveguide; gamma-ray irradiation-enhanced wet-etching; propagation loss; proton-exchanged Z-cut Y-propagating lithium niobate; ridge waveguides; time 30 min; Dry etching; Lithium niobate; Optical devices; Optical materials; Optical modulation; Optical sensors; Optical waveguides; Optoelectronic and photonic sensors; Protons; Sputter etching; Gamma-ray irradiation; proton exchange (PE); waveguide; wet etching;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2008.919450
Filename :
4479619
Link To Document :
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