• DocumentCode
    1116357
  • Title

    GaAs MESFET interface considerations

  • Author

    Wager, John F. ; McCamant, Angus J.

  • Author_Institution
    Oregon State University, Corvallis, OR
  • Volume
    34
  • Issue
    5
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    1001
  • Lastpage
    1007
  • Abstract
    Various properties of GaAs MESFET´s are discussed in terms of the basic physics of interfaces and deep levels. Fermi-level pinning is shown to lead to hole injection from a positively biased metal lying in direct contact with semi-insulating GaAs. This hole injection is partially responsible for low-frequency oscillations in GaAs MESFET´s. Backgating and low-frequency oscillations are shown to be a direct consequence of the peculiar nature of the channel-substrate interface. This interface is discussed within the framework of a three-level model.
  • Keywords
    Dielectric substrates; FETs; Frequency; Gallium arsenide; Interface states; MESFETs; Metal-insulator structures; Physics; Semiconductor device modeling; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23036
  • Filename
    1486747
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1116357