Title :
Demonstration and Characterization of High-Speed Silicon Depletion-Mode Mach–Zehnder Modulators
Author :
Hao Xu ; Xianyao Li ; Xi Xiao ; Zhiyong Li ; Yude Yu ; Jinzhong Yu
Author_Institution :
State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China
Abstract :
High-speed silicon depletion-mode Mach-Zehnder modulators are demonstrated and characterized in this paper. Based on the structural dimensions and material parameters, transmission-line parameters and frequency response performances of the modulators are calculated and predicted by a proposed distributed circuit model. Parasitic coupled-slotline mode excited by the modulator is analyzed and suppressed by gold-wire bridges. Using a spectrum analysis method, the effect of this modification on the modulated optical signal is simulated. Over a broad frequency range from 10 MHz to 40 GHz, silicon depletion-mode Mach-Zehnder modulators with flat electro-optic modulation responses and broad bandwidths have been experimentally demonstrated.
Keywords :
Mach-Zehnder interferometers; electro-optical deflectors; electro-optical modulation; gold; integrated optics; integrated optoelectronics; optical interconnections; silicon; spectral analysis; Au; Si; broad bandwidths; distributed circuit model; flat electro-optic modulation responses; frequency 10 MHz to 40 GHz; frequency response performances; gold-wire bridges; high-speed silicon depletion-mode Mach-Zehnder modulators; material parameters; modulated optical signal modification; parasitic coupled-slotline mode; spectrum analysis method; structural dimensions; transmission-line parameters; Bandwidth; High-speed optical techniques; Junctions; Optical modulation; Phase shifters; Silicon; CMOS technology; Silicon photonics; optical modulator;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2013.2293763