Title :
An analytical threshold voltage model of short-channel MOSFET´s with implanted channels
Author :
DasGupta, A. ; Lahiri, S.K.
Author_Institution :
Indian Institute of Technology, Kharagpur, India
fDate :
5/1/1987 12:00:00 AM
Abstract :
An analytical threshold voltage model based on a charge sharing technique is proposed using a new doubly integrable function to simulate the Gaussian channel doping. The model is computationally simple and predicts with reasonable accuracy the various short-channel effects and the anomalous positive threshold shift with shortening channel length.
Keywords :
Accuracy; Analytical models; Circuit analysis computing; Computational modeling; Doping profiles; Gaussian channels; Poisson equations; Predictive models; Semiconductor process modeling; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23061
