• DocumentCode
    1116969
  • Title

    Interfacial and breakdown characteristics of MOS devices with rapidly grown ultrathin SiO2gate insulators

  • Author

    Moslehi, Mehrdad M. ; Shatas, Steven C. ; Saraswat, Krishna C. ; Meindl, James D.

  • Author_Institution
    Stanford University, Stanford, CA
  • Volume
    34
  • Issue
    6
  • fYear
    1987
  • fDate
    6/1/1987 12:00:00 AM
  • Firstpage
    1407
  • Lastpage
    1410
  • Abstract
    Metal-oxide-semiconductor (MOS) devices fabricated with composite gates and subhundred-angstrom SiO2gate insulators grown by rapid thermal oxidation were characterized by various electrical measurements. The as-fabricated devices with unannealed rapidly grown oxides exhibited breakdown characteristics superior to furnace-grown oxides as evidenced by their excellent breakdown uniformity, an average breakdown field of 15 MV/cm, and an average breakdown charge density of over 50 C/cm2at a stress current density of 1 A/cm2. The preoxidation surface cleaning procedure was observed to affect the charge-to-breakdown and the densities of fixed oxide charges and surface states in these MOS structures.
  • Keywords
    Dielectrics and electrical insulation; Electric breakdown; Ellipsometry; Hafnium; MOS devices; Oxidation; Rapid thermal processing; Silicon; Surface cleaning; Temperature control;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23098
  • Filename
    1486809
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1116969