DocumentCode
1117114
Title
A study of photon emission from n-channel MOSFET´s
Author
Toriumi, Akira ; Yoshimi, Makoto ; Iwase, Masao ; Akiyama, Yutaka ; Taniguchi, Kenji
Author_Institution
Toshiba VLSI Research Center, Kawasaki, Japan
Volume
34
Issue
7
fYear
1987
fDate
7/1/1987 12:00:00 AM
Firstpage
1501
Lastpage
1508
Abstract
It is known that an n-channel MOSFET, operating in the saturation region, is accompanied by visible light emission. The spectral distribution of this emitted light is reported in this paper for the first time. It behaves as exp (-α . hv) under various bias conditions (α: constant); the energy state of hot electrons is described as a Maxwell-Boltzmann distribution. The hot-electron temperature in an n-channel MOSFET is experimentally evaluated from the photon spectrum analysis. As compared with the electric field strength calculated by two-dimensional simulation, the hot-electron temperature is found to be determined as a function of the electric field strength in the drain avalanche region.
Keywords
Degradation; Electrons; Energy states; Geometry; Hot carriers; MOSFET circuits; Power MOSFET; Power supplies; Temperature; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23112
Filename
1486823
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