DocumentCode
1117285
Title
Surface charge effects on planar submicrometer GaAs and InP devices
Author
Bru, Catherine ; Carné, PatriceDe ; Dansas, Pierre ; Pascal, Daniel ; Rousseau, Michel ; Laval, Suzanne
Author_Institution
C.N.R.S., Université Paris-Sud, Bâtiment, Orsay Cedex, France
Volume
34
Issue
8
fYear
1987
fDate
8/1/1987 12:00:00 AM
Firstpage
1611
Lastpage
1616
Abstract
The influence of surface charge effects on the behavior of planar GaAs and InP devices is demonstrated by measuring and calculating the resistances of devices versus the interelectrode length. Both the depletion layer in GaAs and the accumulation layer in InP are shown to be dependent on the interelectrode distance in submicrometer samples.
Keywords
Doping; Gallium arsenide; Indium phosphide; Ohmic contacts; Performance analysis; Performance evaluation; Semiconductor materials; Shape; Strips; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23128
Filename
1486839
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