• DocumentCode
    1117365
  • Title

    An improved method of MOSFET modeling and parameter extraction

  • Author

    Krutsick, Thomas J. ; White, Marvin H. ; Wong, Hon-Sum ; Booth, Richard V H

  • Author_Institution
    Lehigh University, Bethlehem, PA
  • Volume
    34
  • Issue
    8
  • fYear
    1987
  • fDate
    8/1/1987 12:00:00 AM
  • Firstpage
    1676
  • Lastpage
    1680
  • Abstract
    A method is presented to accurately determine MOSFET modeling parameters from a single linear region (VDS< 2kBT/q)ID- VGSmeasurement based on the operation of a single transistor in the strongly inverted regime. The intrinsic values of the surface scattering parameter θsand the transistor gain β0may be separated from the series resistance Rsand drain bias VDSeffects while including band bending beyond the 2φFpoint. The mobility (excluding surface scattering effects), threshold voltage, bulk doping, and flat-band voltage are also determined.
  • Keywords
    Data mining; Doping; MOSFET circuits; Parameter extraction; Rough surfaces; Scattering parameters; Semiconductor process modeling; Surface resistance; Surface roughness; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23136
  • Filename
    1486847
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1117365