• DocumentCode
    1117449
  • Title

    Heating effects on the accuracy of HBT voltage comparators

  • Author

    Wang, Keh-Chung ; Asbeck, Peter M. ; Chang, Mau-Chung F. ; Miller, D.L. ; Sullivan, Gerard J. ; Corcoran, John J. ; Hornak, Thomas

  • Author_Institution
    Rockwell International Science Center, Thousand Oaks, CA
  • Volume
    34
  • Issue
    8
  • fYear
    1987
  • fDate
    8/1/1987 12:00:00 AM
  • Firstpage
    1729
  • Lastpage
    1735
  • Abstract
    Voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors (HBT´s) were examined for dynamic hysteresis effects. Heating effects were identified as the major source of hysteresis. An approximate model is proposed to explain the measured data. Suggestions for analog-to-digital converter design are discussed.
  • Keywords
    Analog-digital conversion; Circuit testing; Clocks; Frequency; Gallium arsenide; Heating; Heterojunction bipolar transistors; Hysteresis; Low voltage; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23144
  • Filename
    1486855
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1117449