Walkout in p-n junctions including charge trapping saturation

A theory of p-n junction breakdown voltage walkout based on the oxide trapped charge model and incorporating charge trapping saturation effect is described. It is shown that the theoretical calculated results are in very good agreement with the voltage walkout time behavior of experimental results, Four key parameters capable of completely describing the voltage walkout characteristics are defined for the first time. The inversely proportional relation between voltage walkout time constant τ and reverse junction avalanche current IRis also established.