• DocumentCode
    1117583
  • Title

    Nonplanar multiple-epitaxy bipolar power integrated-circuit process

  • Author

    Curran, Pat ; Ang, Simon S.

  • Author_Institution
    Texas Instruments, Inc., Dallas, TX
  • Volume
    34
  • Issue
    8
  • fYear
    1987
  • fDate
    8/1/1987 12:00:00 AM
  • Firstpage
    1823
  • Lastpage
    1830
  • Abstract
    The market need to merge digital, analog, and power components on a common monolithic substrate in a cost-effective manner continues to grow in importance in many applications. This paper describes a nonplanar multiple-epitaxy bipolar power integrated-cir-Cuit process that is particularly well-suited for low-cost power applications such as series-pass voltage regulators. The concept enhances transistor characteristics and can be extended to more complex, higher performance intelligent power IC applications.
  • Keywords
    CMOS process; Epitaxial layers; Fabrication; Integrated circuit technology; Isolation technology; Lattices; Power generation economics; Power integrated circuits; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23157
  • Filename
    1486868