DocumentCode
1117583
Title
Nonplanar multiple-epitaxy bipolar power integrated-circuit process
Author
Curran, Pat ; Ang, Simon S.
Author_Institution
Texas Instruments, Inc., Dallas, TX
Volume
34
Issue
8
fYear
1987
fDate
8/1/1987 12:00:00 AM
Firstpage
1823
Lastpage
1830
Abstract
The market need to merge digital, analog, and power components on a common monolithic substrate in a cost-effective manner continues to grow in importance in many applications. This paper describes a nonplanar multiple-epitaxy bipolar power integrated-cir-Cuit process that is particularly well-suited for low-cost power applications such as series-pass voltage regulators. The concept enhances transistor characteristics and can be extended to more complex, higher performance intelligent power IC applications.
Keywords
CMOS process; Epitaxial layers; Fabrication; Integrated circuit technology; Isolation technology; Lattices; Power generation economics; Power integrated circuits; Substrates; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23157
Filename
1486868
Link To Document