• DocumentCode
    1117599
  • Title

    An improved presentation of the potential profile in linearly graded p-n junctions

  • Author

    Jindal, C. ; Panayotatos, P.

  • Author_Institution
    The State University of New Jersey, Piscataway, NJ
  • Volume
    34
  • Issue
    8
  • fYear
    1987
  • fDate
    8/1/1987 12:00:00 AM
  • Firstpage
    1832
  • Lastpage
    1834
  • Abstract
    The potential profiles in linearly graded p-n junctions are presented in a novel more concise way. New transformations are introduced for both spatial coordinate ("distance") and potential. The distance normalization is achieved by the introduction of a new scaling length resulting in an improved presentation of potential profiles that, unlike previous treatments, can be shown on a single graph for a wide range of doping gradients. A transformation in the potential, normalized in terms of the doping gradient parameter, leads to an even more concise representation with the advantage of unity slope curves near the origin for all doping gradients.
  • Keywords
    Boundary conditions; Charge carrier processes; Doping profiles; Neodymium; P-n junctions; Poisson equations; Potential well; Semiconductor process modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23159
  • Filename
    1486870