DocumentCode
1117599
Title
An improved presentation of the potential profile in linearly graded p-n junctions
Author
Jindal, C. ; Panayotatos, P.
Author_Institution
The State University of New Jersey, Piscataway, NJ
Volume
34
Issue
8
fYear
1987
fDate
8/1/1987 12:00:00 AM
Firstpage
1832
Lastpage
1834
Abstract
The potential profiles in linearly graded p-n junctions are presented in a novel more concise way. New transformations are introduced for both spatial coordinate ("distance") and potential. The distance normalization is achieved by the introduction of a new scaling length resulting in an improved presentation of potential profiles that, unlike previous treatments, can be shown on a single graph for a wide range of doping gradients. A transformation in the potential, normalized in terms of the doping gradient parameter, leads to an even more concise representation with the advantage of unity slope curves near the origin for all doping gradients.
Keywords
Boundary conditions; Charge carrier processes; Doping profiles; Neodymium; P-n junctions; Poisson equations; Potential well; Semiconductor process modeling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23159
Filename
1486870
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