DocumentCode :
1117599
Title :
An improved presentation of the potential profile in linearly graded p-n junctions
Author :
Jindal, C. ; Panayotatos, P.
Author_Institution :
The State University of New Jersey, Piscataway, NJ
Volume :
34
Issue :
8
fYear :
1987
fDate :
8/1/1987 12:00:00 AM
Firstpage :
1832
Lastpage :
1834
Abstract :
The potential profiles in linearly graded p-n junctions are presented in a novel more concise way. New transformations are introduced for both spatial coordinate ("distance") and potential. The distance normalization is achieved by the introduction of a new scaling length resulting in an improved presentation of potential profiles that, unlike previous treatments, can be shown on a single graph for a wide range of doping gradients. A transformation in the potential, normalized in terms of the doping gradient parameter, leads to an even more concise representation with the advantage of unity slope curves near the origin for all doping gradients.
Keywords :
Boundary conditions; Charge carrier processes; Doping profiles; Neodymium; P-n junctions; Poisson equations; Potential well; Semiconductor process modeling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23159
Filename :
1486870
Link To Document :
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